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IPF015N10N5ATMA1

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IPF015N10N5ATMA1

TRENCH >=100V

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ 5 series IPF015N10N5ATMA1 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and offers exceptional continuous drain current capabilities of 35A at ambient temperature (Ta) and 276A at case temperature (Tc). With a low on-resistance of 1.53mOhm at 100A and 10V, this MOSFET minimizes conduction losses, crucial for power efficiency. The surface mount PG-TO263-7-1 package ensures robust thermal management, supporting a power dissipation of 3.8W (Ta) and 375W (Tc). Key parameters include a Gate Charge (Qg) of 210 nC at 10V and input capacitance (Ciss) of 16000 pF at 50V. Operating across a wide temperature range of -55°C to 175°C, the IPF015N10N5ATMA1 is suitable for use in automotive, industrial power, and server applications.

Additional Information

Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs1.53mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id3.8V @ 279µA
Supplier Device PackagePG-TO263-7-1
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds16000 pF @ 50 V

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