IPF010N04NF2SATMA1
TRENCH <= 40VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies StrongIRFET™2 N-Channel Power MOSFET, part number IPF010N04NF2SATMA1, offers a 40V drain-source breakdown voltage. This surface mount device, packaged in a PG-TO263-7-U02 (TO-263-7, D2PAK), features a low on-resistance of 1mOhm at 100A and 10V gate-source voltage. It supports continuous drain currents of 46A at ambient temperature and 289A at case temperature, with maximum power dissipation of 3.8W (Ta) and 250W (Tc). Key electrical parameters include a maximum gate charge (Qg) of 239 nC and input capacitance (Ciss) of 11300 pF at 20V. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications in the automotive and industrial sectors.
Additional Information
Series: StrongIRFET™2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 289A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 189µA |
| Supplier Device Package | PG-TO263-7-U02 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 239 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 20 V |
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