IPDH4N03LAG
MOSFET N-CH 25V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPDH4N03LAG is a 25V N-Channel power MOSFET in a PG-TO252-3-11 package. This device features a low on-resistance of 4.2mOhm at 60A and 10V, with a continuous drain current capability of 90A (Tc). The gate charge (Qg) is rated at 26nC maximum at 5V, and input capacitance (Ciss) is 3200pF maximum at 15V. Designed for efficient power switching, it supports a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 2V maximum at 40µA. The MOSFET is surface mountable and can operate within a temperature range of -55°C to 175°C. Power dissipation is 94W (Tc) maximum. This component is commonly utilized in automotive and industrial power management applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 15 V |
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