IPDD60R145CFD7XTMA1
MOSFET N-CH 600V 24A HDSOP-10Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CFD7 series N-Channel Power MOSFET, part number IPDD60R145CFD7XTMA1, offers a 600V drain-source breakdown voltage and a continuous drain current of 24A at 25°C (Tc). This device features a low on-resistance of 145mOhm at 6A and 10V Vgs. With a gate charge of 28nC maximum at 10V and input capacitance of 1199pF maximum at 400V, it is designed for efficient switching. The IPDD60R145CFD7XTMA1 is housed in a PG-HDSOP-10-1 surface mount package and supports a maximum power dissipation of 160W at 25°C (Tc). This component is suitable for applications in power supplies, solar inverters, and industrial power systems. It operates within a temperature range of -55°C to 150°C (TJ) and is supplied on a tape and reel.
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PowerSOP Module |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 300µA |
| Supplier Device Package | PG-HDSOP-10-1 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1199 pF @ 400 V |
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