IPD90P04P4L04ATMA1
MOSFET P-CH 40V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD90P04P4L04ATMA1 is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) rating of 90 A at 25°C (Tc). With a low on-resistance (Rds On) of 4.3 mOhm at 90 A and 10 V, it minimizes conduction losses. The device offers a maximum power dissipation of 125 W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 176 nC at 10 V and input capacitance (Ciss) of 11570 pF at 25 V. The IPD90P04P4L04ATMA1 is housed in a PG-TO252-3-313 package, suitable for surface mounting. This MOSFET is commonly utilized in automotive, industrial, and power supply systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11570 pF @ 25 V |