IPD90P04P405AUMA2
MOSFET P-CH 40V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS®-P2 series P-channel MOSFET, part number IPD90P04P405AUMA2, features a 40V drain-source breakdown voltage and a continuous drain current of 90A at 25°C (Tc). This surface mount device, housed in a TO-252-3 (DPAK) package, offers a low on-resistance of 4.7mOhm at 90A and 10V Vgs. Its maximum power dissipation is rated at 125W (Tc). Key parameters include a gate charge of 154nC at 10V and input capacitance of 10300pF at 25V. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in applications such as power management, automotive systems, and industrial motor control.
Additional Information
Series: OptiMOS®-P2RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |
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