IPD90P04P405ATMA1
MOSFET P-CH 40V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel Power MOSFET, part number IPD90P04P405ATMA1, is a surface-mount device designed for high-current applications. This TO-252-3 (DPAK) packaged component offers a continuous drain current of 90A at 25°C and a drain-source voltage of 40V. Key performance characteristics include a maximum on-resistance (Rds On) of 4.7mOhm at 90A and 10V gate-source voltage, with a total gate charge (Qg) of 154 nC at 10V. The device supports a maximum power dissipation of 125W (Tc) and operates within a temperature range of -55°C to 175°C. It is suitable for use in demanding sectors such as automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |
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