IPD90P03P4L04ATMA1
MOSFET P-CH 30V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD90P03P4L04ATMA1 is a P-channel power MOSFET in a PG-TO252-3-11 package. This automotive-grade component offers a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 90 A at 25°C (Tc). Featuring an extremely low on-resistance (Rds(on)) of 4.1 mOhm at 90 A and 10 V, it is designed for high-efficiency power switching applications. The device boasts a maximum power dissipation of 137 W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 160 nC at 10 V and an input capacitance (Ciss) of 11300 pF at 25 V. This MOSFET is suitable for demanding automotive applications, including electric vehicle powertrains and advanced driver-assistance systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 137W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 253µA |
| Supplier Device Package | PG-TO252-3-11 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
| Qualification | AEC-Q101 |
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