IPD90P03P404ATMA1
MOSFET P-CH 30V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series P-channel Power MOSFET, part number IPD90P03P404ATMA1. This device features a 30V drain-source voltage rating and a continuous drain current capability of 90A at 25°C (Tc). The Rds(on) is specified at a maximum of 4.5mOhm at 90A and 10V Vgs. With a maximum power dissipation of 137W (Tc), it utilizes a surface mount TO-252-3, DPAK package. Key parameters include a gate charge (Qg) of 130 nC (max) at 10V and input capacitance (Ciss) of 10300 pF (max) at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This component is commonly employed in automotive and industrial power management applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 137W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 253µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |
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