IPD90N06S4L06ATMA1
MOSFET N-CH 60V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, IPD90N06S4L06ATMA1, is designed for demanding applications requiring high current and low on-resistance. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 90A at 25°C. The Rds(on) is specified at a maximum of 6.3mOhm at 90A and 10V Vgs, with a gate charge (Qg) of 75 nC at 10V. It offers a maximum power dissipation of 79W at 25°C. The IPD90N06S4L06ATMA1 utilizes a surface mount PG-TO252-3-11 package suitable for automated assembly. This MOSFET is commonly found in automotive and industrial power management systems. It operates across a temperature range of -55°C to 175°C (TJ) and is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 40µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5680 pF @ 25 V |