IPD90N06S4L05ATMA1
MOSFET N-CH 60V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ MOSFET, part number IPD90N06S4L05ATMA1, is an N-Channel device featuring 60V drain-source voltage and 90A continuous drain current at 25°C. This surface-mount component, packaged in a TO-252-3 (DPAK) configuration, offers a maximum on-resistance of 4.6mOhm at 90A and 10V Vgs. Key electrical characteristics include a maximum gate charge of 110 nC at 10V Vgs and input capacitance of 8180 pF at 25V Vds. The device supports a gate-source voltage range of ±16V and operates within an ambient temperature range of -55°C to 175°C. Power dissipation is rated at 107W (Tc). This OptiMOS™ device is suitable for applications in automotive, industrial power control, and power supply switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 60µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 25 V |