IPD90N06S407ATMA1
MOSFET N-CH 60V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-channel power MOSFET, IPD90N06S407ATMA1, offers a 60V drain-source breakdown voltage with a continuous drain current capability of 90A at 25°C. This component features a low on-resistance of 6.9mOhm maximum at 90A and 10V Vgs, achieved through advanced MOSFET technology. The device is designed for efficient power switching with a gate charge of 56nC maximum at 10V Vgs and input capacitance of 4500pF maximum at 25V. Packaged in a PG-TO252-3-11 (TO-252-3, DPAK) for surface mounting, it supports a maximum power dissipation of 79W. Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for applications in automotive and industrial power control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 40µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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