IPD90N06S405ATMA1
MOSFET N-CH 60V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD90N06S405ATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). The low on-resistance of 5.1mOhm at 90A and 10V Vgs ensures minimal conduction losses. With a maximum power dissipation of 107W (Tc), it is suitable for demanding thermal environments. The IPD90N06S405ATMA1 utilizes surface mount technology in a PG-TO252-3-11 package, facilitating automated assembly. Key parameters include a gate charge of 81 nC at 10V and input capacitance of 6500 pF at 25V. This MOSFET is commonly employed in automotive power systems, industrial power supplies, and battery management applications, where robust performance and thermal management are critical. The operating temperature range extends from -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 60µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 25 V |
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