IPD90N06S404ATMA1
MOSFET N-CH 60V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPD90N06S404ATMA1, features a 60V drain-source voltage and a continuous drain current of 90A at 25°C (Tc). This surface mount device, packaged in a TO-252-3 (DPAK) configuration, offers a low on-resistance of 3.8mOhm at 90A and 10V Vgs, with a maximum power dissipation of 150W (Tc). The N-channel MOSFET operates with a gate-source voltage range of ±20V and a threshold voltage of 4V. Key electrical characteristics include a gate charge (Qg) of 128 nC at 10V and input capacitance (Ciss) of 10400 pF at 25V. This component is suitable for applications in automotive and industrial power management. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10400 pF @ 25 V |
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