IPD90N04S304ATMA1
MOSFET N-CH 40V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel MOSFET, part number IPD90N04S304ATMA1, is a 40V device in a TO-252-3, DPAK surface mount package. This high-efficiency MOSFET features a maximum continuous drain current of 90A at 25°C and a low on-resistance of 3.6mOhm at 80A and 10V (Vgs). With a power dissipation capability of 136W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 5200 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial power, and server power supply applications. The device is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |
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