IPD85P04P407ATMA1
MOSFET P-CH 40V 85A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series P-Channel power MOSFET, part number IPD85P04P407ATMA1. This automotive-grade device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 85A at 25°C (Tc). With a low on-resistance (Rds On) of 7.3mOhm at 85A and 10V, it offers efficient power handling up to 88W (Tc). The MOSFET is packaged in a PG-TO252-3-313 surface mount configuration, commonly known as TO-252-3 or DPAK. Key parameters include a maximum gate charge (Qg) of 89 nC at 10V and an input capacitance (Ciss) of 6085 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for automotive applications requiring high-efficiency power switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 85A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO252-3-313 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6085 pF @ 25 V |
| Qualification | AEC-Q101 |
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