IPD80R2K8CEATMA1
MOSFET N-CH 800V 1.9A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 120µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 100 V |
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