IPD80R1K0CEBTMA1
MOSFET N-CH 800V 5.7A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ series N-Channel MOSFET, part number IPD80R1K0CEBTMA1, offers 800 V (Vdss) drain-source voltage and 5.7 A (Tc) continuous drain current. This surface mount device, packaged in a TO-252-3 (PG-TO252-3-11) case, features a maximum power dissipation of 83 W (Tc). The Rds On is specified at 950 mOhm maximum at 3.6 A and 10 V gate-source voltage, with a typical gate charge (Qg) of 31 nC at 10 V. Input capacitance (Ciss) is a maximum of 785 pF at 100 V. This component is suitable for applications in power supplies, server and telecom power, industrial power supplies, and consumer electronics. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 100 V |
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