IPD80P03P4L07ATMA1
MOSFET P-CH 30V 80A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPD80P03P4L07ATMA1 is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 80 A at 25°C, with a maximum power dissipation of 88 W at the same temperature. The device exhibits a low on-resistance (Rds On) of 6.8 mOhm at 80 A and 10 V Vgs, facilitating high efficiency. It operates with gate-source voltages ranging from 4.5 V to 10 V for optimal performance and has a maximum gate-source voltage of +/- 16 V. Key parameters include a gate charge (Qg) of 80 nC at 10 V and input capacitance (Ciss) of 5700 pF at 25 V. The IPD80P03P4L07ATMA1 is packaged in a TO-252-3, DPAK (SC-63) surface mount configuration, supplied on tape and reel. Its operating temperature range is -55°C to 175°C. This MOSFET is widely utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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