IPD80N06S3-09
MOSFET N-CH 55V 80A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD80N06S3-09 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C (Tc). The low on-resistance (Rds On) of 8.4mOhm at 40A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. With a maximum power dissipation of 107W (Tc), it is suitable for demanding thermal environments. The device utilizes a surface mount PG-TO252-3-11 package, facilitating automated assembly. Key parameters include a gate charge (Qg) of 88 nC at 10V Vgs and input capacitance (Ciss) of 6100 pF at 25V Vds. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET finds application in automotive, industrial power supplies, and electric vehicle charging systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 55µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 25 V |
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