IPD80N04S306ATMA1
MOSFET N-CH 40V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD80N04S306ATMA1 is a 40V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a low on-resistance (Rds On) of 5.2mOhm at 80A and 10V Vgs, minimizing conduction losses. With a continuous drain current capability of 90A (Tc) and a maximum power dissipation of 100W (Tc), it is suitable for demanding power management tasks. The device offers a gate charge (Qg) of 47 nC at 10V and an input capacitance (Ciss) of 3250 pF at 25V. Packaged in a surface mount TO-252-3, DPAK (SC-63) configuration, it operates across an extended temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in automotive, industrial power supplies, and server applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 52µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
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