IPD70R950CEAUMA1
MOSFET N-CH 700V 7.4A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-channel power MOSFET, part number IPD70R950CEAUMA1, offers a 700V drain-source voltage (Vdss) and a continuous drain current (Id) of 7.4A at 25°C (Tc). This device features a maximum on-resistance (Rds On) of 950mOhm at 1.5A and 10V. With a gate charge (Qg) of 15.3 nC at 10V and input capacitance (Ciss) of 328 pF at 100V, it is designed for efficient switching. The MOSFET is housed in a PG-TO252-3 (DPAK) surface-mount package and supports a maximum power dissipation of 68W (Tc). Operating temperature ranges from -40°C to 150°C (TJ). This component is suitable for applications in power supplies, lighting, and industrial power conversion.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
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