IPD70R600CEAUMA1
MOSFET N-CH 700V 10.5A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPD70R600CEAUMA1 is a 700V N-channel Power MOSFET from the CoolMOS™ CE series. This device features a low on-resistance of 600mOhm at 1A, 10V, and a continuous drain current capability of 10.5A (Tc). With a maximum power dissipation of 86W (Tc), it is suitable for demanding applications. The MOSFET offers a gate charge of 22 nC at 10V and an input capacitance of 474 pF at 100V. Packaged in a surface-mount PG-TO252-3 (DPAK) case, the IPD70R600CEAUMA1 operates within a temperature range of -40°C to 150°C (TJ). Its robust design makes it ideal for use in power supplies, lighting, and industrial applications.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 474 pF @ 100 V |
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