IPD70R2K0CEAUMA1
MOSFET N-CH 700V 4A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE IPD70R2K0CEAUMA1 is an N-channel power MOSFET designed for high voltage applications. This device features a drain-source voltage (Vdss) of 700 V and a continuous drain current (Id) of 4 A at 25°C. With a maximum power dissipation of 42 W, it is suitable for demanding power conversion systems. The Rds(On) is specified at a maximum of 2 O at 1 A and 10 V, with a gate charge (Qg) of 7.8 nC at 10 V. Input capacitance (Ciss) is a maximum of 163 pF at 100 V. The MOSFET is housed in a PG-TO252-3 (TO-252-3, DPAK) surface mount package, supplied on tape and reel. Operating temperature range is from -40°C to 150°C. This component finds application in power supply units, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 163 pF @ 100 V |
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