IPD70P04P4L08AUMA2
MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS®-P2 series P-channel MOSFET, part number IPD70P04P4L08AUMA2, offers a 40V drain-source voltage and a continuous drain current of 70A at 25°C (Tc). This surface mount device, packaged in a TO-252-3 (DPAK) configuration, features a maximum on-resistance of 7.8mOhm at 70A and 10V Vgs. It is designed for efficient power management with a maximum power dissipation of 75W (Tc). The device exhibits a gate charge of 92 nC (max) at 10V Vgs and an input capacitance of 5430 pF (max) at 25V Vds. Operating temperature range is -55°C to 175°C (TJ). Typical applications include automotive power switching and industrial motor control.
Additional Information
Series: OptiMOS®-P2RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 120µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5430 pF @ 25 V |
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