IPD70P04P4L08ATMA1
MOSFET P-CH 40V 70A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD70P04P4L08ATMA1 is a P-Channel Power MOSFET designed for demanding automotive applications conforming to AEC-Q101 qualification. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) capability of 70A at 25°C (Tc). The low on-resistance (Rds On) of 7.8mOhm at 70A and 10V drive ensures high efficiency. With a maximum power dissipation of 75W (Tc), this device is suitable for power management solutions. The surface mount TO-252-3 (DPAK) package, supplied on tape and reel, facilitates automated assembly. Key parameters include a gate charge (Qg) of 92 nC at 10V and input capacitance (Ciss) of 5430 pF at 25V. The device operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 120µA |
| Supplier Device Package | PG-TO252-3-313 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5430 pF @ 25 V |
| Qualification | AEC-Q101 |
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