IPD70P04P409ATMA1
MOSFET P-CH 40V 73A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPD70P04P409ATMA1 is a P-Channel Power MOSFET designed for demanding automotive applications. This surface mount device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 73A at 25°C (Tc). With a maximum Rds(on) of 8.9mOhm at 70A and 10V, it offers efficient power handling with a maximum power dissipation of 75W (Tc). The device is qualified to AEC-Q101 standards and operates across a wide temperature range from -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 70 nC at 10V and an input capacitance (Ciss) of 4810 pF at 25V. The component is supplied in a TO-252-3, DPAK package, presented on a Tape & Reel.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 120µA |
| Supplier Device Package | PG-TO252-3-313 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4810 pF @ 25 V |
| Qualification | AEC-Q101 |
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