IPD70N12S3L12ATMA1
MOSFET N-CHANNEL_100+Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD70N12S3L12ATMA1 is a robust N-Channel power MOSFET engineered for demanding applications. This component features a 120 V drain-source breakdown voltage and a continuous drain current capability of 70 A at 25°C (Tc), with a maximum power dissipation of 125 W (Tc). The low on-resistance of 11.5 mOhm at 70 A and 10 V gate-source voltage, coupled with a gate charge of 77 nC at 10 V, ensures high efficiency in switching applications. Designed for surface mounting in the TO-252-3, DPAK package, this device operates across a temperature range of -55°C to 175°C (TJ). The IPD70N12S3L12ATMA1 is AEC-Q101 qualified and manufactured using advanced MOSFET technology, making it suitable for automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 83µA |
| Supplier Device Package | PG-TO252-3-11 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5550 pF @ 25 V |
| Qualification | AEC-Q101 |
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