IPD70N10S3L12ATMA1
MOSFET N-CH 100V 70A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPD70N10S3L12ATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 70A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). Featuring an ultra-low on-resistance (Rds On) of 11.5mOhm at 70A and 10V, it is optimized for efficient power conversion. The device boasts a gate charge (Qg) of 77 nC (max) at 10V and an input capacitance (Ciss) of 5550 pF (max) at 25V. Operable across a temperature range of -55°C to 175°C (TJ), it is housed in a surface-mount PG-TO252-3-11 (DPAK) package. This MOSFET is suitable for power supply, automotive, and industrial motor drive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 83µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5550 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
