IPD65R950CFDBTMA1
MOSFET N-CH 650V 3.9A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPD65R950CFDBTMA1, offers a 650 V drain-source breakdown voltage and a continuous drain current of 3.9 A at 25°C (Tc). This device features a maximum on-resistance (Rds On) of 950 mOhm at 1.5 A and 10 V Vgs. The TO-252-3 (PG-TO252-3, DPAK) package facilitates surface mounting. Key parameters include a gate charge (Qg) of 14.1 nC at 10 V and an input capacitance (Ciss) of 380 pF at 100 V. With a maximum power dissipation of 36.7 W (Tc) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power supply units and motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36.7W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 100 V |
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