IPD65R660CFDBTMA1
MOSFET N-CH 650V 6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPD65R660CFDBTMA1 is a 650V N-Channel Power MOSFET in a PG-TO252-3 (DPAK) package for surface mounting. This device features a maximum continuous drain current of 6A (Tc) and a low on-resistance of 660mOhm at 2.1A and 10V gate drive. With a maximum power dissipation of 62.5W (Tc) and a gate charge of 22 nC, it is suitable for applications in power supply units and industrial power conversion. The input capacitance (Ciss) is 615 pF at 100V, and it operates over a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |