IPD65R650CEATMA1
MOSFET N-CH 650V 10.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPD65R650CEATMA1, offers a 650V drain-source breakdown voltage with a continuous drain current of 10.1A at 25°C (Tc). This device features a maximum on-resistance of 650mOhm at 2.1A and 10V, driven by a 10V gate voltage. The N-channel MOSFET is packaged in a PG-TO252-3 (TO-252-3, DPAK) surface-mount configuration and supports a maximum power dissipation of 86W (Tc). Key parameters include a gate charge of 23 nC at 10V and an input capacitance of 440 pF at 100V. It operates within a temperature range of -40°C to 150°C (TJ) and has a gate-source voltage tolerance of ±20V, with a threshold voltage of 3.5V at 210µA. This component is suitable for applications in power supply units, lighting, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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