IPD65R600E6ATMA1
MOSFET N-CH 650V 7.3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ E6 series N-channel power MOSFET, IPD65R600E6ATMA1, offers a 650V drain-source breakdown voltage. This surface mount device, packaged in a TO-252-3 (DPAK) configuration, features a maximum continuous drain current of 7.3A at 25°C and a power dissipation of 63W. With a typical Rds(on) of 600mOhm at 2.1A and 10V gate-source voltage, it utilizes advanced MOSFET technology for efficient power switching. Key parameters include a gate charge of 23 nC at 10V and an input capacitance of 440 pF at 100V. It operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power supply units and power factor correction circuits.
Additional Information
Series: CoolMOS™ E6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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