IPD65R600C6ATMA1
LOW POWER_LEGACYManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power Transistor, part number IPD65R600C6ATMA1, offers a 650 V breakdown voltage and a continuous drain current of 7.3 A at 25°C (Tc). This surface mount device features a maximum power dissipation of 63 W (Tc) and a low on-resistance of 600 mOhm at 2.1 A and 10 V. The transistor has a gate charge of 23 nC (max) at 10 V and an input capacitance of 440 pF (max) at 100 V. Its operating temperature range is -55°C to 150°C (TJ). Packaged in a TO-252-3, DPAK (SC-63) configuration, this component is delivered on a Tape & Reel (TR). It is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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