IPD65R420CFDATMA1
MOSFET N-CH 650V 8.7A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPD65R420CFDATMA1, is engineered for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 8.7 A at 25°C (Tc). The Rds On (Max) is specified at 420 mOhm for a 3.4 A drain current and 10 V gate-source voltage, with a maximum power dissipation of 83.3 W (Tc).
The MOSFET is housed in a PG-TO252-3 (DPAK) surface mount package and operates across a temperature range of -55°C to 150°C (TJ). Key parameters include a Gate Charge (Qg) of 31.5 nC and Input Capacitance (Ciss) of 870 pF. This component is suitable for use in power supply units, lighting, and industrial applications demanding efficient switching performance at high voltage levels. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 300µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
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