IPD65R380E6ATMA1
MOSFET N-CH 650V 10.6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ E6 series N-Channel Power MOSFET, part number IPD65R380E6ATMA1, offers a 650V breakdown voltage and 10.6A continuous drain current capability. This device features a low on-resistance of 380mOhm at 3.2A, 10V. Engineered for high-efficiency power conversion, it is suitable for applications in server power supplies, industrial power supplies, and LED lighting. The IPD65R380E6ATMA1 is housed in a PG-TO252-3 surface mount package, providing a maximum power dissipation of 83W (Tc). Key parameters include a gate charge of 39nC at 10V and input capacitance of 710pF at 100V. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™ E6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
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