IPD65R250E6XTMA1
MOSFET N-CH 650V 16.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPD65R250E6XTMA1 is an N-Channel Power MOSFET from the CoolMOS™ E6 series. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 16.1A at 25°C. With a maximum Rds On of 250mOhm at 4.4A and 10V, it offers efficient power handling. The device is packaged in a PG-TO252-3 (TO-252-3, DPAK) surface mount configuration, supplied on tape and reel. Key parameters include a gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 950 pF at 1000V. This MOSFET is suitable for applications requiring high voltage and efficient switching, commonly found in power supply units and lighting solutions. The maximum power dissipation is 208W at the case temperature.
Additional Information
Series: CoolMOS™ E6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 400µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 1000 V |
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