IPD65R1K5CEAUMA1
MOSFET N-CH 700V 5.2A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPD65R1K5CEAUMA1 is a 700V N-Channel Power MOSFET designed for efficient switching applications. This device features a continuous drain current of 5.2A at 25°C (Tc) and a maximum power dissipation of 53W (Tc). The Rds(on) is specified at 1.5 Ohm maximum at 1A and 10V Vgs. Key parameters include a gate charge of 10.5 nC at 10V and input capacitance of 225 pF at 100V. The TO-252-3 (DPAK) surface mount package is suitable for automated assembly in power supply, lighting, and industrial motor control systems. Operating temperature ranges from -40°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
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