IPD65R1K4CFDATMA2
MOSFET N-CH 650V 2.8A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CFD2 series N-Channel Power MOSFET, part number IPD65R1K4CFDATMA2, is designed for high-efficiency power conversion applications. This surface mount device features a 650V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.8A at 25°C. The IPD65R1K4CFDATMA2 offers a maximum on-resistance (Rds On) of 1.4 Ohm at 1A and 10V gate-source voltage. Key parameters include a typical gate charge (Qg) of 10 nC at 10V and input capacitance (Ciss) of 262 pF at 100V. The device is housed in a PG-TO252-3 package and supports a maximum power dissipation of 28.4W. It is suitable for use in power supplies, lighting, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CFD2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28.4W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 100 V |
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