IPD64CN10N G
MOSFET N-CH 100V 17A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD64CN10N-G is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 100V drain-source voltage (Vds) and supports a continuous drain current of 17A at 25°C (Tc), with a maximum power dissipation of 44W (Tc). The device exhibits a low on-resistance (Rds On) of 64mOhm at 17A and 10V gate-source voltage (Vgs), indicating minimal conduction losses. Key parameters include a gate charge (Qg) of 9 nC at 10V and input capacitance (Ciss) of 569 pF at 50V. The IPD64CN10N-G is housed in a PG-TO252-3 (DPAK) surface-mount package, facilitating automated assembly. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in power supplies, motor control, and automotive electronics.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 569 pF @ 50 V |
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