IPD640N06LGBTMA1
MOSFET N-CH 60V 18A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' IPD640N06LGBTMA1 is an N-channel MOSFET from the OptiMOS™ series, packaged in a PG-TO252-3 (DPAK) surface mount configuration. This component offers a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 18A at 25°C. Its low on-resistance, specified as 64mOhm maximum at 18A and 10V Vgs, contributes to efficient power handling with a maximum power dissipation of 47W (Tc). Key parameters include a Gate Charge (Qg) of 13 nC at 10V and an input capacitance (Ciss) of 470 pF at 30V. The operating temperature range is -55°C to 175°C (TJ). This device is commonly utilized in industrial and automotive applications requiring robust power switching. The component is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 16µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 30 V |
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