IPD60R950C6
MOSFET N-CH 600V 4.4A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPD60R950C6, a CoolMOS™ C6 series N-channel power MOSFET. This component features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.4 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 950 mOhm at 1.5 A and 10 V gate-source voltage. Key electrical characteristics include a 13 nC maximum gate charge (Qg) at 10 V and a 280 pF maximum input capacitance (Ciss) at 100 V. With a maximum power dissipation of 37 W (Tc), this MOSFET is housed in a PG-TO252-3 (TO-252-3, DPAK) surface-mount package. Operating temperature ranges from -55°C to 150°C (TJ). The IPD60R950C6 is suitable for applications in power factor correction, switch-mode power supplies, and general-purpose power conversion.
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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