IPD60R800CEATMA1
MOSFET N-CH 600V 5.6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series, part number IPD60R800CEATMA1, is a 600V N-Channel Power MOSFET. This device features a maximum continuous drain current of 5.6A (Tc) and a maximum power dissipation of 48W (Tc). The Rds(on) is specified at 800mOhm at 2A, 10V. Key parameters include a gate charge (Qg) of 17.2 nC @ 10V and input capacitance (Ciss) of 373 pF @ 100V. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package with a surface mount type. It operates within a temperature range of -40°C to 150°C (TJ) and is supplied on a Tape & Reel (TR). This component is commonly utilized in power supply applications and lighting solutions.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 373 pF @ 100 V |
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