IPD60R750E6ATMA1
MOSFET N-CH 600V 5.7A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ E6 series N-Channel Power MOSFET, part number IPD60R750E6ATMA1. This device features a 600 V drain-source breakdown voltage and a continuous drain current of 5.7 A at 25°C (Tc). With a maximum on-resistance of 750 mOhm at 2 A and 10 V Vgs, it offers efficient switching. The TO-252-3 (DPAK) package is suitable for surface mounting. Key parameters include a gate charge of 17.2 nC (max) at 10 V Vgs and input capacitance of 373 pF (max) at 100 V Vds. This component is utilized in power supply applications, motor control, and lighting systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ E6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 373 pF @ 100 V |
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