IPD60R650CEBTMA1
MOSFET N-CH 600V 7A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-channel power MOSFET, IPD60R650CEBTMA1, offers a 600V drain-source voltage and 7A continuous drain current at 25°C (Tc). This surface mount device features a maximum on-resistance of 650mOhm at 2.4A and 10V Vgs, with a gate charge of 20.5nC at 10V. It has an input capacitance of 440pF at 100V and a maximum power dissipation of 82W (Tc). The component is housed in a TO-252-3, DPAK package and operates within a temperature range of -40°C to 150°C. This MOSFET is suitable for applications in power factor correction (PFC) and switch-mode power supplies (SMPS).
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 82W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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