IPD60R600P6
MOSFET N-CH 600V 7.3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ P6 series N-channel power MOSFET, part number IPD60R600P6, offers a 600V drain-source voltage and a continuous drain current of 7.3A at 25°C (Tc). This surface mount device, housed in a PG-TO252-3 (TO-252-3, DPAK) package, features a maximum power dissipation of 63W (Tc). With a typical Rds(on) of 600mOhm at 2.4A and 10V Vgs, it supports a gate drive voltage up to ±20V. Key parameters include a maximum gate charge of 12 nC @ 10V and a maximum input capacitance of 557 pF @ 100V. This component is suitable for applications in power factor correction (PFC) and high voltage switching power supplies, commonly found in consumer electronics and industrial automation. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolMOS™ P6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 557 pF @ 100 V |
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