IPD60R600E6ATMA1
MOSFET N-CH 600V 7.3A TO252Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ E6 N-Channel Power MOSFET, part number IPD60R600E6ATMA1, offers a 600V drain-source voltage with a continuous drain current of 7.3A at 25°C. This surface mount device, in a TO-252-3 (DPAK) package, features a maximum power dissipation of 63W. Its Rds On is specified at a maximum of 600mOhm at 2.4A and 10V gate drive. Key parameters include a gate charge (Qg) of 20.5 nC and input capacitance (Ciss) of 440 pF, both at specified voltage conditions. This component is suitable for high-voltage switching applications across various industries, including power supplies, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™ E6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
Request a Quote
Clients Also Buy
IPD65R380E6ATMA1
MOSFET N-CH 650V 10.6A TO252-3
IPD65R250E6XTMA1
MOSFET N-CH 650V 16.1A TO252-3
IPD60R450E6BTMA1
MOSFET N-CH 600V 9.2A TO252-3
