IPD60R600E6
MOSFET N-CH 600V 7.3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ E6 series N-Channel Power MOSFET, part number IPD60R600E6. This 600V device features a 7.3A continuous drain current capability at 25°C (Tc) and a maximum power dissipation of 63W (Tc). Designed for surface mounting in the PG-TO252-3 (DPAK) package, it offers a low on-resistance of 600mOhm maximum at 2.4A and 10V Vgs. Key parameters include Vgs(th) of 3.5V (max) at 200µA, gate charge (Qg) of 20.5 nC (max) at 10V, and input capacitance (Ciss) of 440 pF (max) at 100V. Suitable for applications in power supplies, server power, and lighting. Packaged in Tape & Reel (TR).
Additional Information
Series: CoolMOS™ E6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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