IPD60R600CPBTMA1
MOSFET N-CH 600V 6.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPD60R600CPBTMA1, from the CoolMOS™ CP series, is a 600V N-Channel Power MOSFET. This device offers a continuous drain current of 6.1A (Tc) and a maximum power dissipation of 60W (Tc). Featuring a low on-resistance of 600mOhm at 3.3A, 10V, and a gate charge of 27 nC, it is designed for efficient power conversion. The input capacitance (Ciss) is rated at a maximum of 550 pF at 100V. The MOSFET is housed in a PG-TO252-3 (DPAK) surface mount package. This component is suitable for applications in power supplies, industrial automation, and consumer electronics where high voltage and efficient switching are critical. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CPRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 220µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 100 V |
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