IPD60R600C6ATMA1
MOSFET N-CH 600V 7.3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 series N-Channel Power MOSFET, part number IPD60R600C6ATMA1, features a 600V drain-source voltage and a continuous drain current of 7.3A at 25°C (Tc). This device offers a maximum on-resistance of 600mOhm at 2.4A and 10V Vgs, with a gate charge of 20.5 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 440 pF at 100V. Designed for surface mounting, it comes in a PG-TO252-3 (DPAK) package. With a power dissipation of 63W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in power factor correction, switch mode power supplies, and lighting.
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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